研究者総覧 - 大野　武雄

オオノ　タケオ
大野　武雄

所属大分大学理工学部電気エネルギー・電子工学プログラム

職種准教授

論文
論文	Pulse response of Ag2S resistance change device Proceedings of 22nd International Conference on Flow Dynamics,416-417頁 2025/11
論文	Effect of oxygen vacancies at the AZO/ZnO interface on ReRAM characteristics Proceedings of 21st International Conference on Flow Dynamics,405-407頁 2024/11
論文	Influence of active electrode impurity on memristive characteristics of ECM devices Journal of Solid State Electrochemistry 28,1735-1741頁 2024/02
論文	Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment Japanese Journal of Applied Physics 61 (SM),SM1010 2022/07
論文	Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications Nanotechnology 31 (26),26LT01 2020/04
論文	Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency ACS Applied Electronic Materials 1 (11),2184-2189頁 2019/10
論文	Influence of rf sputter power on ZnO film characteristics for transparent memristor devices AIP Advances 9 (10),105216 2019/10
論文	Neutral oxygen beam treated ZnO-based resistive switching memory device ACS Applied Electronic Materials 1 (1),18-24頁 2018/12
論文	Current-induced magnetization switching using an electrically insulating spin-torque generator Science Advances 4 (2),eaar2250 2018/02/23
論文	Energy control of neutral oxygen particles passing through an aperture electrode Results in Physics 8,169-171頁 2017/12
論文	Ta2O5-based redox memory formed by neutral beam oxidation JAPANESE JOURNAL OF APPLIED PHYSICS 55 (6),06GJ01 2016/06
論文	Formation of Ge oxide film by neutral beam postoxidation using Al metal film JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4),04EJ03 2016/04
論文	Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures APPLIED PHYSICS LETTERS 107 (13),133107 2015/09
論文	Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation APPLIED PHYSICS LETTERS 106 (17),173110 2015/04
論文	Observation of a Ag protrusion on a Ag2S island using a scanning tunneling microscope RESULTS IN PHYSICS 5,182-183頁 2015
論文	Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch ADVANCED FUNCTIONAL MATERIALS 22 (17),3606-3613頁 2012/09
論文	Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 13 (1),013002 2012/02
論文	Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch APPLIED PHYSICS LETTERS 99 (20),203108 2011/11
論文	Short-term plasticity and long-term potentiation mimicked in single inorganic synapses NATURE MATERIALS 10 (8),591-595頁 2011/08
論文	Memristive operations demonstrated by gap-type atomic switches APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 102 (4),811-815頁 2011/03
論文	Atomic switches: atomic-movement-controlled nanodevices for new types of computing SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 12 (1),013003 2011/02
論文	Fabrication of Deep Silicon Microstructures by the Combination of Anodization and p(++) Etch Stop IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING 5 (4),493-497頁 2010/07
論文	Learning Abilities Achieved by a Single Solid-State Atomic Switch ADVANCED MATERIALS 22 (16),1831-+頁 2010/04
論文	The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 7 (10),2510-2513頁 2010
論文	Tunneling current of GaAs ultrashallow sidewall n(+)p(+)n(+) and p(+)n(+)in(+) structure prepared by area-selective molecular layer epitaxy PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 7 (10),2474-2477頁 2010
論文	The substrate orientation dependence of Be doping in molecular layer epitaxy of GaAs PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 (9),2763-+頁 2008
論文	Tunneling mechanism of GaAs ultrashallow sidewall tunnel junction PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 (9),2882-+頁 2008
論文	Characteristics of electron beam-evaporated high <>k<>-TiOx thin films on n-GaAs PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 4 (5),1723-+頁 2007
論文	Deep levels in GaAs ultrashallow sidewall pin junctions measured by photocapacitance method Physica Status Solidi C: Conferences 3 (3),639-642頁 2006
論文	Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions Physica Status Solidi C: Conferences 3 (3),635-638頁 2006
論文	Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions THIN SOLID FILMS 464,123-127頁 2004/10
論文	Effects of AsH3 surface treatment for the improvement of ultrashallow area-selective regrown GaAs sidewall tunnel junction JOURNAL OF THE ELECTROCHEMICAL SOCIETY 151 (2),G131-G135頁 2004/02
論文	Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum JOURNAL OF CRYSTAL GROWTH 259 (1-2),61-68頁 2003/11
論文	Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions APPLIED SURFACE SCIENCE 216 (1-4),549-553頁 2003/06
論文	Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions APPLIED PHYSICS LETTERS 81 (14),2563-2565頁 2002/09