研究者総覧 - 大森　雅登

オオモリ　マサト
大森　雅登

所属大分大学理工学部電気エネルギー・電子工学プログラム

職種准教授

論文
論文	Determination of Mg acceptor concentration in GaN through photoluminescence Applied Physics Express 14 (5),051002-051002頁 2021/05/01
論文	Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing Applied Physics Express 13 (8),086501 2020/07/28
論文	Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching Applied Physics Express 13 (1),016505 2019/12/19
論文	Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing Applied Physics Letters 115 (14),142104 2019/09/30
論文	Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 (2),1900367 2019/09/19
論文	Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing 2019 19th International Workshop on Junction Technology (IWJT) 2019/06
論文	Photocurrent and photoluminescence characteristics of AlGaAs/GaAs double-heterostructures with a pair of two-dimensional electron and hole channels Journal of Applied Physics 122 (10) 2017/09/11
論文	InGaAs triangular barrier photodiodes for high-responsivity detection of near-infrared light Applied Physics Express 9 (6),062101 2016/05/16
論文	GaAs-based triangular barrier photodiodes with embedded type-II GaSb quantum dots Applied Physics Express 9 (5),052002 2016/04/15
論文	Electrical Characteristics of AlGaAs/GaAs Heterostructures With a Pair of 2-D Electron and Hole Channels IEEE Transactions on Electron Devices 62 (11),3619-3626頁 2015/11
論文	Triangular-barrier quantum rod photodiodes: Their fabrication and detector characteristics Applied Physics Letters 104 (8),081120 2014/02/24
論文	Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties Applied Physics Express 6 (4),045003-045003頁 2013/04/01
論文	Diffusion process of excitons in the wetting layer and their trapping by quantum dots in sparsely spaced InAs quantum dot systems Applied Physics Letters 98 (13),133109 2011/03/28
論文	Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells physica status solidi c 8 (2),420-422頁 2011/01/13
論文	Photoluminescence spectra and carrier capture processes in sparsely‐spaced InAs quantum dot systems physica status solidi c 8 (2),251-253頁 2011/01/03
論文	Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy physica status solidi c 8 (2),275-277頁 2010/11/02
論文	Temperature dependences of charged excitons in low‐density InAs quantum dot system physica status solidi c 5 (9),2867-2868頁 2008/07/08
論文	Formation of ultra-low density ([less-than or equal to]10[4]cm[-2]) self-organized InAs quantum dots on GaAs by a modified molecular beam epitaxy method APPLIED PHYSICS EXPRESS 1 (6),061202 2008/06/06
論文	Electron-Hole Separation of Zero-Dimensional Excitons in A Single Self-Organized InAs Quantum Dot Studied Under Normal and In-Plane Electric Fields AIP Conference Proceedings 2007
論文	Redistribution of photogenerated carriers in neutral and charged InAs quantum dot systems Physica E: Low-dimensional Systems and Nanostructures 32 (1-2),175-178頁 2006/05
論文	Anisotropy of the quantum‐confined Stark effect in a single InAs quantum dot physica status solidi c 3 (3),512-515頁 2006/02/21
論文	Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical properties Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 23 (3),1240-1242頁 2005/05/01